期刊
APPLIED SCIENCES-BASEL
卷 7, 期 10, 页码 -出版社
MDPI
DOI: 10.3390/app7101047
关键词
FinFETs; CMOS; device processing; integrated circuits
类别
资金
- National Key Research and Development Program of China [2016YFA0301701]
- Youth Innovation Promotion Association of the Chinese Academy of Sciences [2016112]
The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.
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