Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm(2) V-1 s(-1) at room temperature and 400 cm(2) V-1 s(-1) at 10 K despite the high concentration (1.2 x 10(11) cm(-2)) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)(2) Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects-possibly (BaO)(2) crystallographic shear defects or point defects-significantly reduce the electron mobility. (C) 2017 Author(s).