期刊
APL MATERIALS
卷 5, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4999804
关键词
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资金
- Vannevar Bush Faculty Fellowship program - Basic Research Office of the Assistant Secretary of Defense for Research and Engineering
- Office of Naval Research [N00014-15-1-2847]
- DOE Office of Basic Energy Sciences [DE-FG02-06ER46327]
We report a gate-tunable dimensional crossover in sub-micrometer-scale channels created at the LaAlO3/SrTiO3 interface. Conducting channels of widths 10 nm and 200 nm are created using conducting atomic force microscope lithography. Under sufficient negative back-gate tuning, the orbital magnetoconductance of the 200 nm channel is strongly quenched, and residual signatures of low-field weak-antilocalization become strikingly similar to that of the 10 nm channel. The dimensional crossover for the 200 nm channel takes place near the conductance quantum G = 2e(2)/h. The ability to tune the dimensionality of narrow LaAlO3/SrTiO3 channels has implications for interpreting transport in a variety of gate-tunable oxide-heterostructure devices. (C) 2017 Author(s).
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