期刊
ADVANCED SCIENCE
卷 5, 期 1, 页码 -出版社
WILEY
DOI: 10.1002/advs.201700696
关键词
2D electron gas; AlGaN/GaN-MOS-HEMT; thermoelectric power factor
资金
- Japan Society for the Promotion of Science (JSPS) [25106007, 17H01314, 26287064]
- Asahi Glass Foundation
- Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Next-generation power electronics (funding agency: NEDO)
- National Research Foundation of Korea Grant - Korean Government (MSIP) [NRF-2015R1A5A1036133]
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2015M3D1A1070639]
- [16H06421]
- National Research Foundation of Korea [2015M3D1A1070639, 2015R1A5A1036133] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Grants-in-Aid for Scientific Research [25106007, 17H01314] Funding Source: KAKEN
Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower (S), high electrical conductivity (sigma), and low thermal conductivity (). State-of-the-art nanostructuring techniques that significantly reduce have realized high-performance thermoelectric materials with a figure of merit (ZT = S-2.sigma.T.(-1)) between 1.5 and 2. Although the power factor (PF = S-2.sigma) must also be enhanced to further improve ZT, the maximum PF remains near 1.5-4 mW m(-1) K-2 due to the well-known trade-off relationship between S and sigma. At a maximized PF, sigma is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and sigma of the high-mobility electron gas from -490 mu V K-1 and approximate to 10(-1) S cm(-1) to -90 mu V K-1 and approximate to 10(4) S cm(-1), while maintaining a high carrier mobility (approximate to 1500 cm(2) V-1 s(-1)). The maximized PF of the high-mobility electron gas is approximate to 9 mW m(-1) K-2, which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.
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