期刊
ADVANCED ELECTRONIC MATERIALS
卷 3, 期 2, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201600375
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资金
- Institute for Basic Science (IBS), Korea [IBS-R014-G1-2016-a00]
- AFOSR [FA9550-14-1-0268]
Different growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models.
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