期刊
ADVANCED ELECTRONIC MATERIALS
卷 4, 期 1, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201700329
关键词
Sb2Se3; SnO2; spray pyrolysis; thin-film solar cells
资金
- Major State Basic Research Development Program of China [2016YFA0204000]
- National Natural Science Foundation of China [91433105, 61322401]
- HUST Key Innovation Team for Interdisciplinary Promotion [2016JCTD111]
- Special Fund for Strategic New Development of Shenzhen, China [JCYJ20160414102210144]
Sb2Se3 is a promising photovoltaic material due to its suitable bandgap, strong light absorption, simple phase, nontoxicity, and earth-abundant constituents. Currently, most Sb2Se3 thin-film solar cells are based on toxic CdS as the buffer layer. Here, for the first time, non-toxic, wide-bandgap, and chemically stable SnO2 is introduced as the buffer layer instead of CdS to build superstrate SnO2/Sb2Se3 thin-film solar cells. The phase of sprayed SnO2 films and device band alignment are investigated in detail. SnO2 buffer layer annealed at 480 degrees C exhibits the lowest interfacial defect density and best device performance. Finally, 3.05% efficiency is achieved and the devices show excellent storage and light-soaking stability. This preliminary experimental study implies that SnO2 has potential for developing high-efficiency, stable, and environmentally friendly Sb2Se3-based solar cells.
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