4.6 Article

Sb2Se3 Thin-Film Photovoltaics Using Aqueous Solution Sprayed SnO2 as the Buffer Layer

期刊

ADVANCED ELECTRONIC MATERIALS
卷 4, 期 1, 页码 -

出版社

WILEY
DOI: 10.1002/aelm.201700329

关键词

Sb2Se3; SnO2; spray pyrolysis; thin-film solar cells

资金

  1. Major State Basic Research Development Program of China [2016YFA0204000]
  2. National Natural Science Foundation of China [91433105, 61322401]
  3. HUST Key Innovation Team for Interdisciplinary Promotion [2016JCTD111]
  4. Special Fund for Strategic New Development of Shenzhen, China [JCYJ20160414102210144]

向作者/读者索取更多资源

Sb2Se3 is a promising photovoltaic material due to its suitable bandgap, strong light absorption, simple phase, nontoxicity, and earth-abundant constituents. Currently, most Sb2Se3 thin-film solar cells are based on toxic CdS as the buffer layer. Here, for the first time, non-toxic, wide-bandgap, and chemically stable SnO2 is introduced as the buffer layer instead of CdS to build superstrate SnO2/Sb2Se3 thin-film solar cells. The phase of sprayed SnO2 films and device band alignment are investigated in detail. SnO2 buffer layer annealed at 480 degrees C exhibits the lowest interfacial defect density and best device performance. Finally, 3.05% efficiency is achieved and the devices show excellent storage and light-soaking stability. This preliminary experimental study implies that SnO2 has potential for developing high-efficiency, stable, and environmentally friendly Sb2Se3-based solar cells.

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