期刊
ADVANCED ELECTRONIC MATERIALS
卷 3, 期 5, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201600556
关键词
naphthalene; organic field-effect transistors; organic semiconductors; wide band gap semiconductors
资金
- NSERC of Canada
- NSFC [51373075]
- National Basic Research Program of China (973 Program) [2015CB856500, 2015CB932200]
- National Research Foundation for the Doctoral Program [20133221110004]
- Shenzhen Key Laboratory of Shenzhen Science and Technology Plan [ZDSYS20140509094114164]
- Guangdong Academician Workstation [2013B090400016]
- Guangdong Key Research Project [2015B090914002, 2014B090914003]
- Guangdong Talents Project
- Natural Science Foundation of Guangdong Province [2014A030313800]
This study reports a new simple organic semiconductor 2,6-bis(4-methoxyphenyl) naphthalene (BOPNA) with unprecedentedly large band gap of 3.35 eV and an apparent hole mobility of approximate to 1 cm(2) V-1 s(-1) measured in thin-film organic field-effect transistors in a saturation regime. This large band gap leads to complete optical transparency in the visible range (>370 nm), very high stability and independence of the device current with illumination conditions; this is in contrasts to the behavior of common organic semiconductors that have the band gap in the visible or near-IR range of the spectrum. Crystal structure of BOPNA reveals a highly isotropic electronic coupling in two directions of a herringbone-packing plane. A uniform, nearly single crystalline morphology can be achieved in highly crystalline BOPNA films through a rapid thermal annealing. Temperature-dependent studies reveal increase of the hole mobility as the temperature is reduced from +25 to -25 degrees C, suggesting a band-like transport, followed by a nearly temperature-independent mobility down to at least -150 degrees C.
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