期刊
ADVANCED ELECTRONIC MATERIALS
卷 3, 期 4, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201600364
关键词
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资金
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [2015R1A2A2A01002965]
- National Research Foundation of Korea [2015R1A2A2A01002965] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Since the rediscovery of graphene in 2004, this material has attracted an enormous amount of interest owing to its unique structural, mechanical, electronic, and optical properties. Beyond this, the unique properties of graphene have also triggered extensive research on other two-dimensional (2D) materials including transition metal dichalcogenides (TMDs), particularly for electronic and optoelectronic device applications. In particular, not only single junction but also various heterojunction devices based on 2D materials have afforded novel functionality and advances in many research fields. The availability of various 2D materials could allow the formation of a wide variety of heterojunctions with desired band alignments, thereby providing a powerful fabrication process platform for high-performance electronic and optoelectronic devices. In this review, the important fabrication techniques of i) doping, ii) contact engineering, and iii) heterojunction formation for improving the performance of 2D-material-based devices are first introduced. Promising 2D-material-based electronic and optoelectronic devices are then discussed, including lateral/vertical field-effect transistors (FETs), negative differential resistance (NDR) devices, memory, photodetectors, photovoltaics, and light-emitting diode (LED) devices.
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