期刊
JOURNAL OF SEMICONDUCTORS
卷 37, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/37/6/061001
关键词
nitrides; light-emitting-diodes; MOCVD; multiple-quantum-well; p-doping
资金
- National High Technology Research and Development Program of China [2013AA03A101]
Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review of the development of GaN based LEDs. Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented. We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-state-lighting.
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