期刊
2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
卷 -, 期 -, 页码 1154-1157出版社
IEEE
关键词
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Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility. In general, the non-volatility of FeFET is impacted by its physical structure and there is a trade-off between data retention time and device endurance. To improve the cell endurance, for example, the ferroelectric layer of FeFET needs to be programmed to a low polarization level, leading to a short retention time. In ferroelectric DRAM (FeDRAM) design, degradation in FeFET retention time and write-read disturbance requires the FeDRAM cells to be periodically refreshed in order to prevent data loss. In this work, we propose a novel adaptive refreshing and read voltage control scheme to minimize the energy overheads associated with FeDRAM refreshing while still achieve high cell access reliability.
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