期刊
PHYSICAL REVIEW APPLIED
卷 8, 期 6, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.8.064017
关键词
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资金
- Center for Spintronic Materials, Interfaces, and Novel Architectures (C-SPIN)
- MARCO
- DARPA
- Semiconductor Research Corporation (SRC)
- National Science Foundation (NSF)
- Intel Corporation
- U.S. DoD Vannevar Bush Fellowship
Stochastic spiking neural networks based on nanoelectronic spin devices can be a possible pathway to achieving brainlike compact and energy-efficient cognitive intelligence. The computational model attempt to exploit the intrinsic device stochasticity of nanoelectronic synaptic or neural components to perform learning or inference. However, there has been limited analysis on the scaling effect of stochastic spin devices and its impact on the operation of such stochastic networks at the system level. This work attempts to explore the design space and analyze the performance of nanomagnet-based stochastic neuromorphic computing architectures for magnets with different barrier heights. We illustrate how the underlying network architecture must be modified to account for the random telegraphic switching behavior displayed by magnets with low barrier heights as they are scaled into the superparamagnetic regime. We perform a device-to-system-level analysis on a deep neural-network architecture for a digit-recognition problem on the MNIST data set.
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