4.5 Article

Exceptional Points in Random-Defect Phonon Lasers

期刊

PHYSICAL REVIEW APPLIED
卷 8, 期 4, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.8.044020

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资金

  1. 973 Program [2013CB921804]
  2. National Natural Science Foundation of China [11375060, 11434011, 11474087, 11774086]
  3. ARO Grant [W911NF-16-1-0339]
  4. Pennsylvania State University Materials Research Institute
  5. RIKEN iTHES Project
  6. MURI Center for Dynamic Magneto-Optics via AFOSR [FA9550-14-1-0040]
  7. IMPACT program of JST, CREST [JPMJCR1676]
  8. JSPS
  9. Sir John Templeton Foundation
  10. Grants-in-Aid for Scientific Research [15H02118] Funding Source: KAKEN

向作者/读者索取更多资源

Intrinsic defects in optomechanical devices are generally viewed to be detrimental for achieving coherent amplification of phonons, and great care has thus been exercised in fabricating devices and materials with no (or a minimal number of) defects. Contrary to this view, here we show that, by surpassing an exceptional point (EP), both the mechanical gain and the phonon number can be enhanced despite increasing defect losses. This counterintuitive effect, well described by an effective non-Hermitian phonon-defect model, provides a mechanical analog of the loss-induced purely optical lasing. This opens the way to operating random-defect phonon devices at EPs.

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