期刊
NANOMATERIALS
卷 7, 期 8, 页码 -出版社
MDPI AG
DOI: 10.3390/nano7080231
关键词
NiO nanoparticles; nickel/oxygen vacancies; interstitial oxygen; photoluminescence; electron density
类别
资金
- Ministry of Science and Technology (MOST) of the Republic of China [MOST-105-2112-M-259-003, MOST-106-2112-M-259-001]
Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various sizes of nickel oxide (NiO) nanoparticles. The ultraviolet (UV) emission originated from excitonic recombination corresponding near-band-edge (NBE) transition of NiO, while deep-level-emission (DLE) in the visible region due to various structural defects such as oxygen vacancies and interstitial defects. We found that the NiO nanoparticles exhibit a strong green band emission around similar to 2.37 eV in all samples, covering 80% integrated intensity of PL spectra. This apparently anomalous phenomenon is attributed to photogenerated holes trapped in the deep level oxygen vacancy recombining with the electrons trapped in a shallow level located just below the conducting band.
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