期刊
JOURNAL OF INFORMATION DISPLAY
卷 17, 期 3, 页码 93-101出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/15980316.2016.1200501
关键词
Amorphous oxide semiconductor; thin-film transistor; solution process; multi-stacked active layer
资金
- National Research Foundation of Korea (NRF) - South Korean government (MSIP) [2011-0028819]
In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to improve their electrical characteristics and stabilities based on the authors' previous researches. The MSAL structures can overcome an inherent weakness of the solution-processed AOS TFTs, which is the creation of porosities from solvent volatilization. Furthermore, by modifying each layer, the performance and reliability of the solution-processed AOS TFTs could be improved more. Here, the fundamental studies of MSAL structures with homo-stacked active-layer TFTs are presented, and the various modulations of active layers in hetero-stacked active-layer TFTs are covered. In addition, the effect of the interface between the stacked layers is also discussed.
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