期刊
PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016
卷 168, 期 -, 页码 84-88出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.proeng.2016.11.153
关键词
enzyme-modified FET; ion-sensitive FET; ZnO-based FET; glucose sinsing
资金
- Grants-in-Aid for Scientific Research [16K04936] Funding Source: KAKEN
Characteristics of an enzyme-modified field-effect transistor (EnFET) made of a ZnO-based ion-sensitive FET with immobilized glucose oxidase on the gate surface are studied for the application to healthcare chips. The EnFET was found to be able to detect reversibly and repeatedly the beta-D glucose in solution in the range of 0.2-40 mmol/L with an apparent Michaelis constant of 3.3 mmol/L, indicating the suitability for diabetic plasma glucose sensors. (C) 2016 The Authors. Published by Elsevier Ltd.
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