期刊
出版社
E D P SCIENCES
DOI: 10.1051/matecconf/20166001004
关键词
-
资金
- National Science Council of Taiwan [MOST103-2221-E-269-010]
- Energy R&D Foundation of the Energy Bureau of the Ministry of Economic Affairs, Taiwan
We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据