期刊
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
卷 -, 期 -, 页码 231-234出版社
IEEE
关键词
silicon carbide; super junction; Schottky diodes
资金
- National High Technology Research and Development Program of China (863 Program) [2014AA052401]
- National Outstanding Youth Fund Project [51225701]
This paper presents the first functional SiC super junction devices, SiC SJ Schottky diodes, which substantially improve the trade-off between the breakdown voltage and specific on-resistance in SiC power devices. Processes for fabricating SJ structures by using a trench-etching-and-sidewall-implant method has been developed and a functional SJ Schottky diode has been demonstrated based on this processing method. The measured cell blocking voltage was 1350V, which achieves 95% of the simulated blocking voltage for the ideally-charge balanced SJ structure. The measured device specific on resistance was 0.92m Omega cm(2). The SJ drift region specific on resistance as low as 0.32 m Omega.cm(2) was obtained after subtracting the substrate resistance.
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