期刊
ADVANCED MATERIALS INTERFACES
卷 4, 期 22, 页码 -出版社
WILEY
DOI: 10.1002/admi.201700688
关键词
oxide interfaces; self-limiting monolayer deposition; solution monolayer epitaxy
资金
- Israeli Science Foundation [569/13]
- Ministry of Science and Technology [3-11875]
- US-Israel Binational Science Foundation (BSF) [2014047]
- National Science Foundation [DMR-0654118]
- State of Florida
- U.S. Department of Energy
Interfaces play an important role in a variety of devices including transistors, solar cells, and memory components. Atomically sharp interfaces are essential to avoid charge traps that hamper efficient device operation. Sharp interfaces usually require thin-film fabrication techniques involving ultrahigh vacuum and high substrate temperatures. A new self-limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors is presented. This method is fast, cheap, and yields perfect interfaces as validated by various analysis techniques. It allows the growth of heterostructures with half-unit-cell resolution. The method is demonstrated by designing a hole-type oxide interface SrTiO3/BaO/LaAlO3. It is shown that transport through this interface exhibits properties of mixed electron-hole contributions with hole mobility exceeding that of electrons.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据