Resistive Switching Properties through Iodine Migrations of a Hybrid Perovskite Insulating Layer

This study reports a low-temperature processable, resistive switching (RS) device based on an inorganic-organic hybrid perovskite, i.e., methylammonium lead iodide (CH3NH3PbI3 or MAPbI(3)) via a fast deposition-crystallization method, as the multifunctional insulator layer to form metal/insulator/metal structure in which Al and p(+)-Si wafer are used as the top and the bottom metal electrodes, respectively. The MAPbI(3)-RS device shows acceptable RS characteristics with a switching window of 10(3) at a low voltage region (approximate to 5 V), a stable endurance during 200 cycles, and a high retention for a prolonged time at 10(4) s. The operation mechanism of the MAPbI3-RS device is based on ion (simultaneously vacancy) migration, especially iodine ions, which is analogous to that of oxygen ions in the conventional oxide-based RS devices, confirmed through X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy measurements. Furthermore, unusual multiresistance states are achieved from the MAPbI(3)-RS device under light illumination due to the photosensitivity of MAPbI(3).