期刊
ADVANCED MATERIALS INTERFACES
卷 4, 期 6, 页码 -出版社
WILEY
DOI: 10.1002/admi.201601035
关键词
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资金
- Industrial Strategic Technology Development Program - Ministry of Trade, Industry & Energy (MOTIE, Korea) [10063038]
- Center for Advanced Meta-Materials [NRF-2014M3A6B3063716]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10063038] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2014M3A6B3063716] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This study reports a low-temperature processable, resistive switching (RS) device based on an inorganic-organic hybrid perovskite, i.e., methylammonium lead iodide (CH3NH3PbI3 or MAPbI(3)) via a fast deposition-crystallization method, as the multifunctional insulator layer to form metal/insulator/metal structure in which Al and p(+)-Si wafer are used as the top and the bottom metal electrodes, respectively. The MAPbI(3)-RS device shows acceptable RS characteristics with a switching window of 10(3) at a low voltage region (approximate to 5 V), a stable endurance during 200 cycles, and a high retention for a prolonged time at 10(4) s. The operation mechanism of the MAPbI3-RS device is based on ion (simultaneously vacancy) migration, especially iodine ions, which is analogous to that of oxygen ions in the conventional oxide-based RS devices, confirmed through X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy measurements. Furthermore, unusual multiresistance states are achieved from the MAPbI(3)-RS device under light illumination due to the photosensitivity of MAPbI(3).
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