期刊
ADVANCED MATERIALS INTERFACES
卷 4, 期 17, 页码 -出版社
WILEY
DOI: 10.1002/admi.201700157
关键词
molybdenum ditelluride (MoTe2); phase transition; physical vapor deposition; solid-phase crystallization; transition-metal dichalcogenides (TMDs)
资金
- Ministry of Science and Technology of Taiwan [MOST 103-2221-E-009-221-MY3, NSC 102-2119-M-009-002-MY3, MOST 105-2119-M-009-014-MY3]
- Asian Office of Aerospace Research and Development (AOARD) [16IOA013]
- Office of Naval Research Global (ONRG) [N62909-17-1-2022]
- NCTU-UCB I-RiCE program [MOST 105-2911-I-009-301]
Molybdenum ditelluride (MoTe2) has attracted considerable interest for nanoelectronic, optoelectronic, spintronic, and valleytronic applications because of its modest band gap, high field-effect mobility, large spin-orbit-coupling splitting, and tunable 1T/2H phases. However, synthesizing large-area, high-quality MoTe2 remains challenging. The complicated design of gas-phase reactant transport and reaction for chemical vapor deposition or tellurization is nontrivial because of the weak bonding energy between Mo and Te. This study reports a new method for depositing MoTe2 that entails using physical vapor deposition followed by a postannealing process in a Te-free atmosphere. Both Mo and Te are physically deposited onto the substrate by sputtering a MoTe2 target. A composite SiO2 capping layer is designed to prevent Te sublimation during the postannealing process. The postannealing process facilitates 1T-to-2H phase transition and solid-phase crystallization, leading to the formation of high-crystallinity few-layer 2H-MoTe2 with a field-effect mobility of approximate to 10 cm(2) V-1 s(-1), the highest among all nonexfoliated 2H-MoTe2 currently reported. Furthermore, 2H-MoS2 and Td-WTe2 can be deposited using similar methods. Requiring no transfer or chemical reaction of metal and chalcogen reactants in the gas phase, the proposed method is potentially a general yet simple approach for depositing a wide variety of large-area, high-quality, 2D layered structures.
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