4.5 Review

Interfacial Engineering of Van der Waals Coupled 2D Layered Materials

期刊

ADVANCED MATERIALS INTERFACES
卷 4, 期 9, 页码 -

出版社

WILEY
DOI: 10.1002/admi.201601054

关键词

-

资金

  1. National Key R&D Program of China [2016YFA0300903]
  2. National Natural Science Foundation of China (NSFC) [51522201, 11474006, 91433102]
  3. National Program for Thousand Young Talents of China
  4. National Science Foundation of USA (NSF) [DMR-1404865]
  5. Direct For Mathematical & Physical Scien
  6. Division Of Materials Research [1404865] Funding Source: National Science Foundation

向作者/读者索取更多资源

Engineering the properties of materials is of central importance in modern science and technology. In conventional bulk materials, the property changes are realized mainly through modifying the chemical bonds and crystalline structures, or introducing dopant atoms. Recent studies in van der Waals coupled 2D layered materials have demonstrated a different way of materials engineering through modifying interlayer interactions at the material interfaces, because the interlayer interactions in these materials can be easily controlled by changing interlayer stacking configurations and/or applying external fields. In this review, recent progresses in exploring the effects of van der Waals interlayer interactions on graphene, including the discovery of van Hove singularities, Fermi velocity renormalization, and Hofstadter's butterfly pattern, are discussed. Interlayer interactions at other 2D layered material interfaces, such as transition metal dichalcogenides and black phosphorus, are also discussed. Finally, the prospects of using the van der Waals coupled 2D layered materials for next-generation electronics and optoelectronics are presented..

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据