Ultraviolet-C Photodetector Fabricated Using Si-Doped n-AIGaN Nanorods Grown by MOCVD

Aluminum gallium nitride (AlxGa1-xN) alloy films and nanostructures have attracted extensive research attention for ultraviolet (UV) and deep ultraviolet optoelectronic applications. However, the morphology-controlled growth of high-quality AlxGa1-xN quasi one-dimensional nanostructures has been limited by the complex multi-component phase diagram and inhomogeneous composition distribution. Here, we demonstrated the growth of Si-doped n-type compositionally uniform Al0.45Ga0.55N nanorods employing a metal organic chemical vapor deposition (MOCVD) technique for the application in UV-C photodetectors. A two-step growth process, namely, growth of undoped GaN seeds and subsequent growth of n-AIGaN nanorods over GaN seeds, has been developed. Various characterization techniques have been used to study the crystalline quality, orientation, and optical properties of the realized nanorods. Field emission scanning electron microscopy revealed a uniform distribution of vertically aligned n-AIGaN nanorods over the GaN seeds. X-ray diffraction studies showed that the grown nanorods are preferentially (0002) oriented with hexagonal crystal structure. High-resolution transmission electron microscopy images indicated the nanorods are single crystalline in nature, without any significant crystalline defects and dislocations. Cathodoluminescence spectra of AIGaN nanorods displayed a strong band edge excitonic emission peak at 276 nm at 77 K and shifted to lower energy as the temperature increased to 300 K. The photocurrent current (I-p) of the fabricated photoconductive device was significantly higher in the UV region (250-276 nm) compared to the corresponding dark current. The photocurrent displayed a nonlinear power density (P)-dependent characteristics (I-p alpha P-0.64). The photoresponsivity and sensitivity of the fabricated photodetector were estimated to be similar to 115 mA/W and similar to 64%, respectively, in the UV-C region.