Light-Emitting Devices Modulated by Multilevel Resistive Memories

We demonstrate for the first time that multilevel resistive random access memories (RRAMs) can be utilized to modulate the luminescence of light-emitting devices (LEDs) in Au/GaOx/p-GaN/n-ZnO structures. In these structures, Au/GaOx/p-GaN multilevel RRAMs are integrated with p-GaN/n-ZnO LEDs. The injection current of the LEDs can be controlled by the resistance states of the multilevel RRAMs, thus modulating the luminous intensity. The results reported in this paper may offer a route to more integrated and low-cost LED displays. Moreover, our approach may provide a clue for the diversified applications by integrating RRAMs with other functional electronics.