Energy Transport State Resolved Raman for Probing Interface Energy Transport and Hot Carrier Diffusion in Few-Layered MoS2

Quantitative understanding of 2D atomic layer interface thermal resistance (R) based on Raman characterization is significantly hindered by unknown sample-to-sample optical properties variation, interface-induced optical interference, off-normal laser irradiation, and large thermal-Raman calibration uncertainties. In this work, we develop a novel energy transport state resolved Raman (ET-Raman) to resolve these critical issues, and also consider the hot carrier diffusion, which is crucial but has been rarely considered during interface energy transport study. In ET-Raman, by constructing two steady heat conduction states with different laser spot sizes, we differentiate the effect of R and hot carrier diffusion coefficient (D). By constructing an extreme state of zero/negligible heat conduction using a picosecond laser, we differentiate the effect of R and materials specific heat. In the end, we precisely determine R and D without need of laser absorption and temperature rise of the 2D atomic layer. Seven MoS2 samples (6.617.4 nm) on c-Si are characterized using ET-Raman. Their D is measured in the order of 1.0 cm(2)/s, increasing against the MoS2 thickness. This is attributed to the weaker in-plane electronphonon interaction in thicker samples, enhanced screening of long-range disorder, and improved charge impurities mitigation. R is determined as 1.221.87 X 10(7) K.m(2)/W, decreasing with the MoS2 thickness. This is explained by the interface spacing variation due to thermal expansion mismatch between MoS2 and Si, and increased stiffness of thicker MoS2. The local interface spacing is uncovered by comparing the theoretical Raman intensity and experimental data, and is correlated with the observed R variation.