Flexible InGaZnO TFT devices obtained via humid-UV irradiation with an aqueous-fluoroalcoholic precursor

Wedesigned an aqueous-fluoroalcoholic InGaZnO precursor for obtaining thin-film transistors (TFTs) on a flexible plastic film by spin-coating and low-temperature annealing processes without inert gas conditions. The precursor shows a low surface tension (23.7mNm (-1)), which is advantageous for homogeneous coating onto plastic film. Thermal analysis of the precursor indicates formation of metal oxides at less than 300 degrees C. InGaZnO TFTs were obtained from the precursor by annealing at 300 degrees CviaUVirradiation under humid atmosphere on a transparent polyimide film as well as on a p-Si substrate. The bottom-gate top-contact TFTs on the p-Si show 5.1 cm(2) V-1 s(-1) of the average saturation mobility. The top-gate top-contact TFTs on the transparent polyimide film drive with 0.99 cm(2) V-1 s(-1) of the average saturation mobility. The transparent polyimide film maintains flexibility even after humid-UV irradiation and annealing processes. The InGaZnO TFTs on the transparent polyimide film show more than 80% transmittance in the visible light region between 400 and 780 nm.