期刊
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
卷 -, 期 -, 页码 -出版社
IEEE
DOI: 10.1109/IEDM.2016.7838502
关键词
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The last decade has seen tremendous increase in the operating frequency of transistor based in electronics. With InP HEMTs reaching 1.5 THz f(MAX) and 610 GHz fT, operating frequencies of integrated circuit amplifiers have seen corresponding increase to as high as 1 THz. This paper describes the transistor process, integrated circuit results at 1 THz, as well as background on packaging and measurements at this frequency.
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