Diameter Tuning of β-Ga2O3 Nanowires Using Chemical Vapor Deposition Technique

Diameter tuning of beta-Ga2O3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown beta-Ga2O3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 degrees C) as compared to lower growth temperature (800 degrees C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.