期刊
NANOSCALE RESEARCH LETTERS
卷 12, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/s11671-017-2115-8
关键词
GaN barrier; Hydrogen; Surface; Interface
资金
- National Natural Science Foundation of China [61504090, 21471111, 61604104]
- Applied Basic Research Projects of Shanxi Province [2016021028]
- National Key R&D Program of China [2016YFB0401803]
- Shanxi Provincial Key Innovative Research Team in Science and Technology [201605D131045-10]
Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H-2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H-2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H-2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H-2 proportion further increases, stress relaxation and H-2 over-etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据