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S. A. Iliash et al.
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O. V. Vakulenko et al.
JOURNAL OF APPLIED PHYSICS (2011)
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Yu I. Mazur et al.
NEW JOURNAL OF PHYSICS (2009)
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Masafumi Yamaguchi et al.
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Tunneling emission from self-organized In(Ga)As/GaAs quantum dots observed via time-resolved capacitance measurements
M. Geller et al.
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Y Oyama et al.
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InGaAs/GaAs three-dimensionally-ordered array of quantum dots
YI Mazur et al.
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Deep level defects of InAs quantum dots grown on GaAs by molecular beam epitaxy
CJ Park et al.
JOURNAL OF CRYSTAL GROWTH (2001)
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V Türck et al.
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