期刊
NANO ENERGY
卷 38, 期 -, 页码 385-391出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2017.06.004
关键词
Thermoelectric; Graphene; Nanoparticle; Heterostructure
类别
资金
- Ministry of Science and Technology of Taiwan [MOST 104-2112-M-006-001, MOST 103-2112-M-001-001-MY3, MOST 104-2112-M-001-045]
- King Abdullah University of Science and Technology
- Thousand Young Talents Program of China
- National Natural Science Foundation of China [51602200]
- Educational Commission of Guangdong Province [2016KZDXM008]
- Shenzhen Peacock Plan [KQTD2016053112042971]
- Grants-in-Aid for Scientific Research [26246005] Funding Source: KAKEN
Monolayer graphene exhibits impressive in-plane thermal conductivity (> 1000 W m(-1) K-1). However, the out-of-plane thermal transport is limited due to the weak van der Waals interaction, indicating the possibility of constructing a vertical thermoelectric (TE) device. Here, we propose a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates, where the incorporation of AuNPs further inhibits the phonon transport and enhances the electrical conductivity along vertical direction. A measurable Seebeck voltage is produced vertically between top graphene and bottom Si when the device is put on a hot surface and the figure of merit ZT is estimated as 1 at room temperature from the transient Harman method. The polarity of the output voltage is determined by the carrier polarity of the substrate. The device concept is also applicable to a flexible and transparent substrate as demonstrated.
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