期刊
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
卷 221, 期 -, 页码 35-40出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mseb.2017.03.016
关键词
VOx thin films; Resistive random access memory; Space charge limited current; Electronic bipolar resistive switching; Magnetron sputtering
资金
- National Natural Science Foundation of China [61274113, 61404091, 51502203, 51502204, 61505144]
- Program for New Century Excellent Talents in University [NCET-11-1064]
- Tianjin Natural Science Foundation [14JCQNJC00800]
- Tianjin Science and Technology Developmental Funds of Universities and Colleges [20130702]
In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I-V curves for FIRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics. (C) 2017 Elsevier B.V. All rights reserved.
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