Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

The cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies wei'l) measured on three occasions within 19 months, using the 3w method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi c-) and crystalline (6-) IGZO films were grown by pulsed laser deposition (PLO), followed by X-i-ay difti-action (X RD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced hi c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.