4.6 Article

Birhodanines and their sulfur analogues for air-stable n-channel organic transistors

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 5, 期 35, 页码 9121-9127

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc02886e

关键词

-

资金

  1. ACT-C from JST, Japan [JPMJCR12ZB]
  2. Ministry of Education, Culture, Sports, Science, and Technology of Japan [16K13974]
  3. Agence Nationale de la Recherche, France (ANR) [12-BS07-0032]
  4. Grants-in-Aid for Scientific Research [16K13974] Funding Source: KAKEN

向作者/读者索取更多资源

A series of thin-film n-channel organic field-effect transistors based on various birhodanines, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,2'-dione-4,4'-dithiones (OS-R) and their sulfur analogues, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,4,2',4'-tetrathiones (SS-R) are studied. The SS-R compounds have tilted stacking crystal structures, whereas the OS-R compounds show basically herringbone structures. The alkyl chain R length and the intermolecular S-S interactions influence the molecular packing to realize excellent long-term air stability in the thin-film transistors.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据