4.6 Article

Facile zinc oxide nanowire growth on graphene via a hydrothermal floating method: towards Debye length radius nanowires for ultraviolet photodetection

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 5, 期 38, 页码 10087-10093

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc03325g

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资金

  1. Plant Directed Research and Development funds from the Department of Energy's National Security Campus [DE-NA0002839]
  2. ARO [ARO-W911NF-16-1-0029]
  3. NSF [NSF-DMR-1337737, NSF-DMR-1508494]
  4. Division Of Materials Research
  5. Direct For Mathematical & Physical Scien [1337737] Funding Source: National Science Foundation
  6. Division Of Materials Research
  7. Direct For Mathematical & Physical Scien [1508494] Funding Source: National Science Foundation

向作者/读者索取更多资源

Vertically aligned zinc oxide nanowires on graphene (ZnO-NW/graphene) heterojunction nanohybrids combine the superior sensitivity of crystalline ZnO-NWs with high charge mobility of graphene to provide an ideal platform for high-performance detectors and sensors. Controlling the ZnO-NW microstructure and ZnO-NW/graphene interface is of primary importance for the device performance. This work explores floating hydrothermal growth of ZnO-NWs on seedless and ZnO seeded graphene, and investigates the effects of the microstructure and interface on the performance of ZnO-NW/graphene ultraviolet (UV) detectors. It has been found that the ZnO seed layer facilitates the growth of a dense ZnO-NW array with a NW radius approaching the Debye length. In contrast, the seedless process results in a lower NW areal density and a larger NW diameter on the order of sub-to-few micrometers. Consequently, higher UV responsivity up to 728 A W-1 was obtained in the former. However, a strong charge trapping effect was also observed, which is attributed to the poorer crystallinity of the ZnO-NWs originating from the ZnO seed layer. These results shed light on the importance of controlling the microstructure and interface towards high-performance ZnO-NW/graphene nanohybrid optoelectronics.

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