期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 5, 期 31, 页码 7961-7968出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc01796k
关键词
-
资金
- NSF of China [21476152, 21336005]
- National Excellent Doctoral Dissertation funds [201455]
Small molecule-based multilevel rewritable memory devices have recently gained extensive attention because they possess super-high storage density and can sustain the stored data without power supply and erase and rewrite electrically; however, small molecule-based multilevel flash-type memory device is extremely challenging to achieve. Herein, we designed a symmetric molecule with end-capping naphthalimide acceptors through rational tuning. This molecule showed an improved crystal size and uniform crystal orientation in the film state. The sandwich-structured device exhibited the typical WORM (write-once-read-many times) memory property from OFF to ON1 transition and encouraging flash memory behavior for the ON1/ON2 transition. This is the first report on small molecule-based ternary memory devices with rewritable memory behavior, and this study will inspire the exploration of multilevel data-storage devices with fully rewritable properties in the subsequent researches.
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