期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 5, 期 44, 页码 11551-11558出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc04184e
关键词
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资金
- National Natural Science Foundation of China [11474105, 51172079]
- Science and Technology Program of Guangdong Province, China [2015B090903078, 2015B010105011]
- Science and Technology Project of Guangzhou City [201607010246]
- Scientific Research Foundation of Graduate School of South China Normal University
- Program for Changjiang Scholars and Innovative Research Team in Universities of China [IRT13064]
Considering their reduced size and weight, low cost and portability, self-powered photodetectors that can be functioned independently of an external power supply are extremely important for developing future sensor networks and Internets of Things. Here, we present a self-powered photodetector with a broadband wavelength photoresponse from the ultraviolet to near-infrared region based on GaN microwire array/Si heterojunctions. Due to the highly efficient separation of photogenerated charge carriers, the photodetector shows ultrahigh EQE, responsivity and detectivity, reaching up to 71%, 4.7 x 10(2) mA W-1 and 9.5 x 10(12) Jones, respectively, at zero bias in the 320-850 nm range. A fast response is observed with rise/decay times as low as 2/2 ms. The LDR values are over 80 dB. The performance characteristics are competitive with commercially available biased photodetectors and other reported heterojunction self-powered broadband photodetectors in the literature. In addition, a binary photoresponse is observed under small bias voltages. The heterostructures are fabricated by directly heteroepitaxially growing GaN microwires on patterned Si, enabling large-area device applications, and stand out from low-dimensional semiconductor photodetection systems. The overall high performance coupled with large-scale production makes GaN microwire array/Si heterojunctions promising for practical self-powered broadband photodetectors.
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