4.6 Article

High-quality single-layer nanosheets of MS2 (M = Mo, Nb, Ta, Ti) directly exfoliated from AMS2 (A = Li, Na, K) crystals

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 5, 期 24, 页码 5977-5983

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc00838d

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资金

  1. National key research and development program [2016YFB0901600]
  2. Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB04040200]
  3. CAS Center for Excellence in Superconducting Electronics
  4. NSF of China [61376056]
  5. Science and Technology Commission of Shanghai [16JC1401700, 14520722000]

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Layered transition metal dichalcogenides (TMDs) such as MoS2 have attracted considerable interest as two-dimensional materials because of their unique physical and chemical properties. Single or few-layer TMD nanosheets can be achieved by conventional Li intercalation methods through organolithium chemistry or electrochemistry. However, these methods are hampered by the low yield, mixed phases and a lot of defects inside the nanosheets. Here we develop a novel general strategy to prepare single-layer TMD nanosheets by using AMS(2) (A = Li, Na, K; M = Mo, Nb, Ta, Ti) crystals as ideal precursors. The crystal structure of these compounds ensures the robust S-M-S layers and fully filled alkali atoms between them, which lead to a high-yield production of high-quality single-layer nanosheets by following chemical exfoliation. Surprisingly, MoS2 nanosheets obtained by LiMoS2 crystals show a high-quality 1T' phase, while the widely used n-butyl lithium method can only prepare phase-mixed (2H, 1T, 1T') nanosheets with abundant defects. The as-prepared 1T' MoS2 nanosheets exhibit a remarkable electrical conductivity (618 S cm(-1)), which is much higher than that of MoS2 nanosheets (35.4 S cm(-1)) obtained using the n-butyl lithium method, also the highest value in MoS2 related materials and superior to the best value of the reported 2D films of graphene (550 S cm(-1)).

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