4.8 Article

Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

期刊

CHEMISTRY OF MATERIALS
卷 29, 期 2, 页码 699-707

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.6b04363

关键词

-

资金

  1. Academia Sinica research program on Nanoscience and Nanotechnology [NM004]
  2. Ministry of Science and Technology in Taiwan [MOST-102-2119-M-002-004]

向作者/读者索取更多资源

Large size (similar to 2 cm) single crystals of layered MoTe2 in both 2H- and 1T'-types were synthsized using TeBr4 as the source of Br-2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (rho) measurements. The resistivity rho(T), magnetic susceptibility chi(T), and heat capacity C-p(T) measurement results reveal a first order structural phase transition near similar to 240 K for 1T'-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据