期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 7, 期 5, 页码 1171-1175出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2017.2714139
关键词
High-efficiency solar cells; multicrystalline silicon; n-type silicon
资金
- German Federal Ministry for Economic Affairs and Energy [0324034]
Silicon solar cells featuring the highest conversion efficiencies are made from monocrystalline n-type silicon. The superior crystal quality of high-performance multicrystalline silicon (HP mc) in combination with the inherent benefits of n-type doping (higher tolerance to common impurities) should allow the fabrication of high-efficiency solar cells also on mc silicon. In this paper, we address high-efficiency n-type HP mc solar cells with diffused boron front emitter and full-area passivating rear contact (TOPCon). n-type HP mc silicon was crystallized at Fraunhofer ISE featuring a very high average lifetime in the range of 600 mu s (i.e., diffusion length >800 mu m) after application of all high-temperature steps necessary for cell fabrication. Using a black silicon front texture we have achieved a weighted reflectance of similar to 1% and simultaneously a very good electrical performance, i.e., J(0e) values of <= 60 fA/cm(2) for a 90 Omega/sq emitter. The resulting n-type mc silicon solar cells show certified conversion efficiencies up to 21.9%, representing the current world record for mc silicon solar cells.
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