4.5 Article

Excellent Passivation of Silicon Surfaces by Thin Films of Electron-Beam-Processed Titanium Dioxide

期刊

IEEE JOURNAL OF PHOTOVOLTAICS
卷 7, 期 6, 页码 1551-1555

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2017.2749975

关键词

Silicon solar cells; surface passivation; titanium oxide thin film

资金

  1. National Natural Science Foundation of China [61674154, 61404144, 61674106]
  2. Zhejiang Provincial Natural Science Foundation [LR16F040002]
  3. International S&T Cooperation Program of Ningbo [2015D10021, 2016D10011]
  4. Major Project and Key S&T Program of Ningbo [2016B10004, 2014B10026]

向作者/读者索取更多资源

Dielectric of a titanium dioxide thin film is currently re-emerging as a passivating material for high-efficiency crystalline silicon (c-Si) solar cells, owing to its good passivation quality and appropriate band offset when in contact with c-Si. Here, we demonstrate effective passivation on c-Si substrates by electron-beam-processed titanium oxide layers, which are obtained by low-temperature thermal oxidation of predeposited pure titanium thin films. A derived titanium oxide layer by 3.5-nm titanium at 250 degrees C yields a surface recombination velocity down to 16 cm/s. Structural characterizations reveal that the resultant oxide layers are amorphous titanium dioxide. The passivation property is attributed to Si-O-Ti bonding at the Si-titanium dioxide interface as well as to the presence of an interfacial silicon dioxide layer. The easy processing and high-level passivation capability make these titanium dioxide thin films highly desirable to serve as a good passivating choice toward high-efficiency c-Si solar cells.

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