期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 4, 页码 3911-3921出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b13994
关键词
zinc oxide nanowires; thermal oxidation; screening effect; electrical conductivity; field emitter arrays
资金
- National Key Research and Development Program of China [2016YFA0202001]
- National Key Basic Research Program of China [2010CB327703, 2013CB933601]
- State Key Laboratory of Optoelectronic Materials and Technologies
- Fundamental Research Funds for the Central Universities
- Guangzhou Science Technology and Innovation Commission
Zinc oxide (ZnO) nanowires are prepared for application in large area gated field emitter arrays (FEAs). By oxidizing Al-coated Zn films, the population density of the ZnO nanowires was tuned precisely by varying the thickness of the Al film. The nanowire density decreased linearly as the thickness of the Al film increased. Optimal field emission properties with a turn on field of 6.21 V mu m(-1) and current fluctuations less than 1% are obtained. This can be explained by the minimized screening effect and good electrical conductivity of the back-contact layer. The mechanism responsible for the linear variation in the nanowire density is investigated in detail. Addressable FEAs using the optimal ZnO nanowire cathodes were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results indicate that ZnO nanowires could be applied in large area FEAs.
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