期刊
CHINESE JOURNAL OF CATALYSIS
卷 38, 期 2, 页码 253-259出版社
SCIENCE PRESS
DOI: 10.1016/S1872-2067(16)62576-7
关键词
WO3-x; Titanium oxide; Hydrogen generation; Quantum dots; W5+/oxygen vacancy defect
资金
- National Natural Science Foundation of China [21506156, 21676193]
- Tianjin Municipal Natural Science Foundation [15JCZDJC37300, 16JCQNJC05200]
Z-scheme semiconductors are a promising class of photocatalysts for hydrogen generation. In this work, Z-scheme semiconductors composed of WO3x quantum dots supported on TiO2 (WO3x QDs/TiO2) were fabricated by solvothermal and hydrogen-reduction methods. Characterization by transmission electron microscopy and X-ray diffraction indicated that the amount and size of the WO3x QDs could be tuned by modulating the addition of the W precursor. Evidence from X-ray photoelectron spectroscopy and photoluminescence spectroscopy suggested that the hydrogen reduction of the composite induced the formation of oxygen vacancy (W5+/V-O) defects in WO3. These defects led to ohmic contact between WO3-x and TiO2, which altered the charge-transfer pathway from type II heterojunction to Z-scheme, and maintained the highly reductive and oxidative ability of TiO2 and WO3x, respectively. Therefore, the Z-scheme sample showed 1.3-fold higher photoactivity than pure TiO2 in hydrogen generation. These results suggest that the formation of W5+/VO defects at the interface is highly beneficial for the fabrication of Z-scheme photocatalysts. (C) 2016, Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.
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