4.5 Article

Electronic and magnetic properties of Re-doped single-layer MoS2: A DFT study

期刊

COMPUTATIONAL MATERIALS SCIENCE
卷 128, 期 -, 页码 287-293

出版社

ELSEVIER
DOI: 10.1016/j.commatsci.2016.11.030

关键词

Single-layer MoS2; Re-doped; Electronic and magnetic properties; First principles method

资金

  1. National Natural Science Foundation of China [51572219, 10974152, 61101009, 10904123]
  2. Natural Science Foundation of Shaanxi Province [2009JQ1004, 2014JM2-1008, 2015JM1018]
  3. State Key Laboratory of Transient Optics and Photonic Technology Annual Open Fund [SKLST200915]

向作者/读者索取更多资源

The properties of Re-doped single-layer MoS2 have been investigated by density functional theory (DFT). Four doping configurations are considered, and all of them show large spin polarization. We ascribe the spin polarization of these systems to the single occupation of split 5d orbitals under different crystal fields and the charge transfer from Re atom to single-layer MoS2. Furthermore, our results show that ferromagnetic ground states are favored in these doped systems when different spin orders are considered. These results would be helpful for future MoS2-based spintronic devices. (C) 2016 Elsevier B. V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据