期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 6, 期 11, 页码 S3103-S3105出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0221711jss
关键词
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资金
- National Research Council Research Associateship Award at the U. S. Naval Research Laboratory
- American Association for Engineering Education NRL Postdoctoral Fellow Program
- Office of Naval Research
The properties of thick GaN layers grown by metal organic chemical vapor deposition on 2 HVPE substrates were investigated. Although the epilayer is smooth on a microscopic scale with high quality layers as evidenced by X-ray diffraction and photoluminescence, macroscopic morphological variations are observed on the wafer surface. These variations correspond to disparities in leakage current in fabricated Schottky barrier diodes, with rougher macroscopic morphology resulting in increased leakage current. (c) The Author(s) 2017. Published by ECS. All rights reserved.
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