期刊
APPLIED PHYSICS EXPRESS
卷 10, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/APEX.10.032101
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资金
- King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program
- KACST-KAUST-UCSB Solid State Lighting Program
- NSF MRSEC Program [DMR05-20415]
- National Science Foundation Graduate Research Fellowships [DGE-1144085]
Ultrasmall blue InGaN micro-light-emitting diodes (mu LEDs) with areas from 10(-4) to 0.01mm(2) were fabricated to study their optical and electrical properties. The peak external quantum efficiencies (EQEs) of the smallest and largest mu LEDs were 40.2 and 48.6%, respectively. The difference in EQE was from nonradiative recombination originating from etching damage. This decrease is less severe than that in red AllnGaP LEDs. The efficiency droop at 900 A/cm(2) of the smallest mu LED was 45.7%, compared with 56.0% for the largest, and was lower because of improved current spreading. These results show that ultrasmall mu LEDs may be fabricated without a significant loss in optical or electrical performance. (C) 2017 The Japan Society of Applied Physics
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