期刊
ACS NANO
卷 11, 期 3, 页码 3282-3288出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b00556
关键词
MoTe2 monolayer; MBE; STM/STS; quantum effects; phase transition
类别
资金
- Collaborative Research Fund - Research Grants Council (RGC), Hong Kong Special Administrative Region [HKU9/CRF/13G]
- Ministry of Science and Technology of the People's Republic of China [2013CB921902]
- NSFC [11521404, 11227404, 11504334, U1404109]
Monolayer (ML) transition-metal dichalcogenides exist in different phases, such as hexagonal (2H) and monoclinic (1T') structures. They show very different properties: semiconducting for 2H-MoTe2 and semimetallic for 1T'-MoTe2. The formation energy difference between 2H- and 1T'-phase MoTe2 is small, so there is a high chance of tuning the structures of MoTe2 and thereby introducing applications of phase-change electronics. In this paper, we report the growth of both 2H- and 1T'-MoTe2 MLs by molecular-beam epitaxy (MBE) and demonstrate its tenability by changing the conditions of MBE. We attribute the latter to an effect of Te adsorption. By scanning tunneling microscopy and spectroscopy, we reveal not only the atomic structures and intrinsic electronic properties of the two phases of MoTe2 but also quantum confinement and quantum interference effects in the 2H- and 1T'-MoTe2 domains, respectively, as effected by domain boundaries in the samples.
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