期刊
CHEMISTRY OF MATERIALS
卷 29, 期 5, 页码 2341-2347出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.6b05517
关键词
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资金
- Research Grant from Kwangwoon University
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [2016R1C1B1014935, 2015R1A2A2A01006992]
- Stanford CIS-FMA
- ILJU Foundation
- Future Innovative Research Fund of UNIST (Ulsan National Institute of Science Technology) [1.170005.01]
- Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT, and Future Planning [20090082580]
- Kodak Graduate Fellowship
- EPSRC [EP/K013564/1]
- Extreme Science and Engineering Discovery Environment (XSEDE) - National Science Foundation [TG-DMR120049, TG-DMR150017]
- Queen's Fellow Award [M8407MPH]
- Queen's University Belfast
- Bridging Research Interactions
- Development Grants in Energy (BRIDGE) program under the SunShot initiative of the U.S. Department of Energy (DOE) program [DE-FOA-0000654-1588]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0016523]
- U.S. DOE, Office of Basic Energy Sciences [DE-AC02-76SF00515]
- National Research Foundation of Korea [2015R1A2A2A01006992, 2016R1C1B1014935] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- EPSRC [EP/K013459/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [1612621, EP/K013459/1] Funding Source: researchfish
- U.S. Department of Energy (DOE) [DE-SC0016523] Funding Source: U.S. Department of Energy (DOE)
Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD hBN) as a scalable growth template/dielectric for highperformance organic field-effect transistors. The field-effect transistors based on C-60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm(2) V-1 s(-1) and a maximal mobility of 2.9 cm(2) s(-1) with on/off ratios of 10(7). The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C-60 on CVD h-BN is mainly responsible for the superior charge transport behavior. We believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.
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