期刊
APPLIED PHYSICS LETTERS
卷 110, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4978661
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资金
- Office of the Director of National Intelligence (ODNI)
- Intelligence Advanced Research Projects Activity (IARPA) [W911NF-14-C0089]
- NSF/MRSEC Program through the Cornell Center for Materials Research [DMR-1120296]
- Office of Naval Research
- NSFthrough use of the Cornell Nanofabrication Facility/National Nanofabrication Infrastructure Network [ECCS-0335765]
We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and that the short-pulse energy efficiency can be substantially enhanced by spatial non-uniformity in the initial magnetization of the magnetic free layer. The sign of the Oersted field is essential for this enhancement-in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs. Published by AIP Publishing.
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