期刊
ADVANCED MATERIALS
卷 29, 期 12, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201605092
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资金
- U.S. Army Research Laboratory (ARL) [FA9550-14-1-0052]
- Air Force Office of Scientific Research (AFOSR) [FA9550-14-1-0052]
- MIT/MTL Gallium Nitride (GaN) Energy Initiative
- ONR PECASE program
- Australian Research council [DP140102721, IH150100028, DE130100592]
- FEI Company
- Asian Office of Aerospace Research and Development Grant [FA2386-15-1-4044]
- Australian Research Council [IH150100028] Funding Source: Australian Research Council
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are pro-mising for scalable quantum technologies.
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