期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 12, 页码 10637-10642出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b15587
关键词
electrochemical etching; energy-harvesting device; flexible electronics; GaN; piezoelectric nanogenerators
资金
- National Research Foundation of Korea - Korean Government [NRF-2016R1A2B4008622]
- National Research Foundation of Korea [2016R1A2B4008622] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A transparent and flexible piezoelectric nano generator (TF PNG) is demonstrated based on a GaN membrane fabricated by electrochemical lift-off. Under shear stress on the TF PNG by finger force (similar to 182 mN), the GaN membrane effectively undergoes normal stress and generates piezoelectric polarization along the c-axis, resulting in the generation of piezoelectric output from the TF PNG. Although the GaN layer is 315 times thinner than the flexible polyethylene terephthalate (PET) substrate, the low Young's modulus of PET allows the GaN membranes to absorb similar to 41% of the applied strain energy, which leads to their large lattice deformation under extremely low applied stress. Maximum output voltage and current values of 4.2 V and 150 nA are obtained, and the time decay of the output voltage is discussed.
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